Latin American and Caribbean Consortium of Engineering Institutions

 

Conference Track:  Emerging Technologies

Selection1:       Paper

Language:         English

Keywords:         Dislocation, Semiconductor crystal, finite element method

Contact Title:    Prof.

Contact First Name: C.T.

Contact Last Name:  Tsai

University:       Florida Atlantic University

Web:              http://www.me.fau.edu/faculty/tsai/index.html

Position:

Country:          USA

Email:            tsaict@fau.edu

 

Paper Title:

Dislocation reduction in semiconductor crystal growth

 

Abstract:

The presence of dislocations not only considerably reduces the lifetime and performance, increases the degradation rate of devices made from electronic and optoelectronic materials, but also has a major impact on electronic and optical properties of these materials. Therefore, the commercial viability of high-speed electronic and photonic devices and circuits is strongly dependent on the availability of low dislocation density III-V and II-VI semiconductor compounds.  Even though much effort has been devoted to study the dislocation reduction in these compounds grown from the melt, the details of the dislocation generation remain one of the least understood mechanisms related to the growth of high quality single crystal materials from the melt or from the vapor.

In order to reduce dislocation density generated in the semiconductor crystal, the mechanisms of dislocation generation has to be understood. A finite element model, which couples the microscopic dislocation density to the macroscopic plastic deformation, will be employed to predict the dislocation density generated in the crystal under different crystal growth parameters. The predicted results will be used to investigate the correlation between dislocation generation and crystal growth parameters. It is hoped that the reveal of this correlation will help to improve the current crystal growth process, and to guide future design of an intelligent crystal growth system. This intelligent processing system will enable crystal growers to reduce dislocation density in a semiconductor crystal through the control of growth parameters.  

Mailing Address:

Department of Mechanical Engineering

Florida Atlantic University

777 Glades Road

Boca Raton, FL 33431 

Phone: 

Authors: 

X.A. Zhu / xzhu2@fau.edu / Florida Atlantic University /(P)

C.T. Tsai / tsaict@fau.edu / Florida Atlantic University

 

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